Annealing effects of ZnO thin films on p-Si(100) substrate deposited by PFCVAD

Authors : Kamuran KARA, Ebru Şenadim TÜZEMEN, Ramazan ESEN

Pages : 238-244

Doi:10.3906/fiz-1310-3

View : 23 | Download : 6

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :In this study, ZnO films were prepared on p-Si substrates using the pulsed filtered cathodic vacuum arc deposition insert ignore into journalissuearticles values(PFCVAD); method. We report the effect of annealing temperature on structural and optical properties. The crystallographic structure and the size of the crystallites in the films were studied by means of X-ray diffraction. The films had a weak peak insert ignore into journalissuearticles values(100); orientation at 2theta = sim 32°. X-ray diffraction analysis of the as-deposited ZnO and the film annealed at 850 °C showed a strong ZnO insert ignore into journalissuearticles values(002); diffraction peak centered at 34.1° and 34.5°, respectively. The insert ignore into journalissuearticles values(004); peak was seen for film annealed at 850 °C. ZnO film annealed at 850 °C had higher grain size and better crystallinity. Optical properties of the ZnO films were studied using a UV-Vis-NIR spectrophotometer. The optical band gap of the films was determined using the reflectance spectra by means of the Kubelka-Munk formula. From the optical properties, the band gap energy estimated for films as-deposited and annealed at 850 °C was 3.00 and 3.28 eV, respectively. The Raman scattering spectra of the films was observed at a laser power of 2 mW.
Keywords : ZnO, Kubelka Munk function, Raman scattering