A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices

Authors : Fatih GÜL

Pages : 15-19

Doi:10.17694/bajece.457395

View : 17 | Download : 13

Publication Date : 2019-01-31

Article Type : Research Paper

Abstract :Memristor-based resistive random access memory insert ignore into journalissuearticles values(RRAM); devices are very good competitors for next generation non-volatile crossbar memory applications.   The sneak paths problem is one of the main constraints in fabricating crossbar memory devices. The one diode-one resistor insert ignore into journalissuearticles values(1D1R); structure design is effective for suppressing the sneak paths problem. Suitable circuit models are needed to simulate semiconductor structures. A general circuit model for memristor-based one diode-one resistor structures is proposed in this work. The Simulation Program with Integrated Circuit Emphasis insert ignore into journalissuearticles values(SPICE); environment was used to simulate the designed circuit. Well-known mathematical models such as those of Strukov, Biolek, Joglekar, Prodromakis and Zha were used to simulate the memristor component of the circuit. The current-voltage characteristics were obtained for different mathematical models. All results were compatible with the expected characteristics.   The best fit characteristics were acquired using the Zha and Strukov models.
Keywords : Memristor, 1D1R, Resistive random access memory RRAM, Circuit model