Cryogenic DC Characteristics of Low Threshold Voltage (VTH) n-channel MOSFETs

Authors : Mustafa Berke YELTEN

Pages : 362-365

Doi:10.17694/bajece.570215

View : 18 | Download : 7

Publication Date : 2019-07-30

Article Type : Research Paper

Abstract :Cryogenic electronics has grown in its widespread use for various technological applications. Particularly, CMOS devices and circuits are more frequently used in such systems due to their dominance in the electronics industry. At cryogenic temperatures, characteristics of CMOS devices vary, which should be characterized with measurements. In this paper, the changes in the electronic behavior of a low threshold voltage insert ignore into journalissuearticles values( V TH ); n-channel MOSFET insert ignore into journalissuearticles values(nMOSFET); are captured experimentally. The results are then compared with the measurements of a regular nMOSFET having the same channel width and length. It is shown that although the V TH increase of both transistors is at the same amount, this value corresponds to a more significant percentage of the nominal threshold voltage for the low V TH nMOSFET. 
Keywords : Cryogenic electronics, threshold voltage, low threshold voltage transistors