The effect of different annealing conditions in undoped and Ag doped ZnO thin films grown by SILAR method

Authors : Harun GÜNEY

Pages : 77-81

View : 15 | Download : 11

Publication Date : 2015-10-06

Article Type : Other Papers

Abstract :Undoped, %3 and %5 Silver insert ignore into journalissuearticles values(Ag); doped zinc oxide insert ignore into journalissuearticles values(ZnO); thin films have been grown on glass substrates by simple and economic successive ionic layer absorption and reaction method insert ignore into journalissuearticles values(SILAR);. All grown films were annealed vacuum and air to investigate to effective annealing at 573 K for 30 minutes. Energy-Dispersive-X-Ray-Fluorescence insert ignore into journalissuearticles values(EDXRF); spectroscopy showed %3 and %5 dopants Ag. Absorbance measurements showed that the optical band-gaps of all thin films were wide and generally decrease with annealing. Optical transmittance spectra of ZnO and %3 and %5 doped ZnO thin films showed good transmissions. Thickness of the films was measured by the gravimetric weight difference method using sensitive microbalance. 
Keywords : Anneal effect, SILAR, Ag doped ZnO, absorbance, optical transmittance