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  • Gazi University Journal of Science
  • Volume:32 Issue:4
  • Gallium Oxide: A Rising Star in The Semiconductor Realm

Gallium Oxide: A Rising Star in The Semiconductor Realm

Authors : Matteo BOSİ, Roberto FORNARİ
Pages : 1092-1095
Doi:10.35378/gujs.647201
View : 17 | Download : 8
Publication Date : 2019-12-01
Article Type : Other Papers
Abstract :A “new” semiconductor can gather the interest of the scientific community only when it adds unprecedented properties to the ones already established, with silicon universally considered as the most widespread and the primary benchmark. In the last decades, this happened for example with III-V and III-N semiconducting compounds, capable of emitting and absorbing light and to process signals of much higher frequencies than silicon. More recently, this newly happened with silicon carbide, which can work at higher voltages and power than previously available semiconductors, and with layered transition metal dichalcogenides, for their unusual properties and potential applications in nanoelectronics.
Keywords : Gallium Oxide

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