Differential Depletion Charge Density of the Approximation of Schottky Diodes as Ohmic Annealed a Variety of Temperatures

Authors : Abdulkadir KORKUT

Pages : 525-539

Doi:10.35378/gujs.548269

View : 19 | Download : 11

Publication Date : 2020-06-01

Article Type : Research Paper

Abstract :This study aimed to investigate the differential depletion charge density for insert ignore into journalissuearticles values(Ag, Cu, Ni); /n-Si/Al Schottky diodes which depend on ohmic contact temperatures. Ohmic contact temperature defines the Schottky diode parameters. Furthermore, ohmic temperature is concerned with diode quality. In general, depletion charge density is determined as depending on built-in potential. The differential depletion charge density is smaller than zero-voltage depletion charge density insert ignore into journalissuearticles values(V = 0, Vbi ≠ 0); in the case of forward bias and higher than the zero-voltage depletion charge density for reverse bias. When the depletion charge density formula was expanded into a series, new equations revealed appreciable results. Boundary-values were found for differ-ential depletion charge density using normal and expanded formulae.
Keywords : Differential Depletion Length, Differential Depletion Charge Density, Schottky Barrier Diode, Ohmic Temperatures