Optical Properties of Gaas/Alxga1-xas Superlattice Under E-Field for Quantum Cascade Laser Application

Optical properties of GaAs/AlxGa1-xAs superlattice are studied dependent on quantum well thickness of gain region and doping density of injector layers underperformed electric field. Conduction band alignment of the superlattice is obtained by using effective mass approximation. 1d-Schrodinger formula is solved by using FDM. Intersubband transition energies, linear insert ignore into journalissuearticles values(nonlinear and total); absorption coefficients and linear insert ignore into journalissuearticles values(nonlinear and total); refractive index changes are plotted under applied electric field intensity. Intersubband transition energy of electron from second excited state to first excited state shows 147 meV. It is found that -45 kV/cm electric field intensity and 5 nm layer thickness of last quantum well of the gain region are the best values for studied structure. After that, linear absorption coefficient is investigated dependent on carrier number in the injector region under electric field. It is found that carrier number over 5