Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of Au/Bi4Ti3O12/SnO2 Structures

The electrical properties of Au/Bi 4 Ti 3 O 12 /SnO 2 structures were investigated by forward bias I-V, forward and reverse bias C-V and G/ w -V measurements. The results indicate structural disordering, presence of the interface states in the BTO capacitors and existence of polarization. Dielectric constantinsert ignore into journalissuearticles values( e `);, dielectric lossinsert ignore into journalissuearticles values( e ``); and dielectric tangentinsert ignore into journalissuearticles values(tan d ); were found as 170, 309 and 1,8 respectively at 50 kHz. C-V and G/ w -V were measured in the frequency range of 1 kHz-5 MHz. It was found that dielectric constantinsert ignore into journalissuearticles values( e `); and dielectric lossinsert ignore into journalissuearticles values( e ``); systematically decrease with increasing frequency in 10 kHz-1 MHz frequency range and tan d versus frequency plot exhibits a minimum at about 5 kHz. The ideality factor and series resistance were found to be 1,5 and 1030 W respectively from I-V measurements and series resistance was found as 350 W from the measured conductance in strong accumulation region. The observations are comparable with the other values for BTO structures reported in the literature.