Investigating the Formation Mechanisms of Cu0.83Si0.17 Intermetallic Phase Formed at Cu-Si and Cu-(5at%)Nb/Si Interfaces

Authors : Husniye GULER, Ahmet OZENBAS

Pages : 517-525

View : 42 | Download : 9

Publication Date : 2011-11-25

Article Type : Other Papers

Abstract :A study of intermetallic compound formation at the interface between copper thin film and silicon substrate is presented in this work. Two systems; Cu/Si and Cu-insert ignore into journalissuearticles values(5at%); Nb/Si, were studied. From the intermetallics formed at the interfaces of two systems; as a model, formation mechanisms of Cu 0.83 Si 0.17 with and without niobium impurity were examined. Variations in values of parabolic rate constants and activation energies with Nb impurity content were determined. The samples were annealed at different temperatures and time intervals after vacuum deposition of the films. X-Ray, Scanning Electron Microscopy insert ignore into journalissuearticles values(SEM);, and Energy Dispersive Spectroscopy insert ignore into journalissuearticles values(EDS); analysis showed the sequential formation of several intermetallic phases at the interfaces. Using this data, a model had been given about the formation of the observed intermetallic phases.   Key Words : Intermetallics, thin metal films, impurity effect, reaction rate constants.  
Keywords : Intermetallics, thin metal films, impurity effect, reaction rate constants

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