AN OPTICAL METHOD FOR THE QUALITY EXPLORATION OF A GaAs MATERIAL

Authors : Hatice Hilal KURT

Pages : 87-98

View : 61 | Download : 10

Publication Date : 2014-08-27

Article Type : Other Papers

Abstract :The explorations on the surface qualities of these materials become very important for the preparation of solar cells in PVs . Therefore a nondestructive optical testing method is proposed in this paper by using GaAs PV materials. The proposed method uses a gas ionization system insert ignore into journalissuearticles values( IS ); together with an optical measurement tool powered by the fractal dimension analysis insert ignore into journalissuearticles values( OMT-FD );. The method initially records the spatial distributed light emission intensity insert ignore into journalissuearticles values( SDLEI ); data radiated from the IS including the PV material and applies OMT-FD to this data in order to find out the optical properties of the sample. Thus the efficiencies of the discharge light emission insert ignore into journalissuearticles values( DLE ); intensities can be accurately and qualitatively investigated and the optical responses of charge carriers are determined for any external voltage range. It has been proven that OMT-FD results indicate a sharp increment above a certain external voltage to IS and gives a quality value for the PV cells under the appropriate external voltage value applied to the IS . The optimized parameter set for the testing system has been ascertained.
Keywords : gas discharge, semiconductor

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