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  • Gazi University Journal of Science Part A: Engineering and Innovation
  • Volume:10 Issue:1
  • The Comparison of the Temperature Susceptibility of the Serial Resistance Effect of Au/n-GaAs Type M...

The Comparison of the Temperature Susceptibility of the Serial Resistance Effect of Au/n-GaAs Type M/S Structures

Authors : Esra EVCİN BAYDİLLİ
Pages : 9-19
Doi:10.54287/gujsa.1206972
View : 42 | Download : 8
Publication Date : 2023-03-28
Article Type : Research Paper
Abstract :To enable comparison with the literature, this study seeks to assess the temperature susceptibility of serial resistance insert ignore into journalissuearticles values(Rs); features of the Au/n-GaAs type M/S structure, which is acceptable the benchmark sample. The serial resistance features of the sample were computed separately withal principal of Ohm, Norde, and Cheungs\` functions. The current-voltage insert ignore into journalissuearticles values(I-V); data used in order to compute were evaluated at the voltage values between +2V and -2 V and temperature values between 120K and 360K in 60K steps. Each computation method was also compared one another other. As a result, the fact that the Rs values computed using principal of Ohm, Norde functions and Cheungs\` functions tended to reduce with rising temperature, as anticipated by the literature results. In addition, it was determined that, with only tiny variations, the temperature susceptibility of Rs is consistent across all computation methods. In addition, as a result of the comparison with the literature, it was concluded serial resistance is less of an issue when a polymer interfacial layer is present at the metal-semiconductor contact region. The Rs parameter of the M/S structure is, in essence, a sensitive function of temperature and input voltage.
Keywords : M S Structures, Serial Resistance, Ohm, Cheung Cheung Functions, Norde Function

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