EFFECT OF MAGNETIC FIELD ON GERMANIUM P-N HOMOJUNCTION

Authors : Duygu Akın KARA, Ozan KIYIKCI, Görkem OYLUMLUOĞLU

Pages : 1-5

Doi:10.22531/muglajsci.987733

View : 21 | Download : 12

Publication Date : 2021-12-31

Article Type : Research Paper

Abstract :In this study, the effect of magnetic field, which is perpendicular to junction current, on diffusion current has been investigated in Germanium based p-n homojunction diodes, theoretically. The magnetic field dependent diffusion current has been derived analytically. Resulting magnetic field dependent diode equation has been used to produce current – voltage theoretical data. Using this data, current – voltage curves of devices, Iinsert ignore into journalissuearticles values(B); - V have been plotted under different magnetic fields and effect of magnetic field on current – voltage characteristics has been investigated. According to these results, it has been observed that increasing magnetic field increases potential barrier Vth, decreases junction current and reverse saturation current I0. Also effect of magnetic field on static and dynamic magnetoresistances, using R d insert ignore into journalissuearticles values(B); – V and R s insert ignore into journalissuearticles values(B); – V graphs which is plotted using theoretical data, have been analyzed and it has been observed that increasing magnetic field increases static and dynamic magnetoresistance in Germanium based devices.
Keywords : Keywords Semiconductor, magnetic field, magnetoresistance, p n junction