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  • Düzce Üniversitesi Bilim ve Teknoloji Dergisi
  • Volume:11 Issue:2
  • Graphene Growth in Different Thickness by Chemical Vapor Deposition Method

Graphene Growth in Different Thickness by Chemical Vapor Deposition Method

Authors : Aliye KAHYAOĞLU, Özlem ÜNLÜ
Pages : 787-798
Doi:10.29130/dubited.1121793
View : 39 | Download : 13
Publication Date : 2023-04-30
Article Type : Research Paper
Abstract :Graphene is a two-dimensional honeycomb material with an atomic-thick planar structure. Graphene is one of the most studied nanomaterials that can be used in nanotechnology applications. There are various methods for synthesizing or isolating graphene monolayers, but by far the most popular uses a process called chemical vapor deposition. Chemical vapor deposition, or CVD, is a process that has the potential to produce relatively high-quality graphene at scale. The CVD process is relatively straightforward with some specialized equipment. However, controlling gas volume, pressure, temperature, and timing is critical to producing good quality graphene. In this project, the synthesis of graphene was carried out at different temperatures, pressures and coating times to produce stable, controlled and durable graphene by chemical vapor deposition. The characteristics of graphene sheets obtained by SEM, AFM and Raman spectroscopy analyzes were determined, as well as the optimal parameters for a stable, sustainable and controlled production of graphene. In parallel, the electrical properties of graphene films on different thicknesses have been studied. Therefore, obtaining a thin film with suitable thickness, transmission and electrical properties of graphene, which is currently marketed worldwide, was investigated.
Keywords : Grafen, Kimyasal Buhar Biriktirme, Nanoteknoloji, Malzeme Bilimi

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