A Wide Frequency Range C-V and G-V Characteristics Study in Schottky Contacts with a BODIPY-Pyridine Organic Interface

In this study, it was aimed to produce an organic interface layered Schottky diode structure and frequency effect on capacitance-conductance-voltage measurements. In this context, phosphor doped n-type Si single crystal has been used as a semiconductor substrate with a 1-20 Ω.cm resistivity, insert ignore into journalissuearticles values(100); surface oriention, 2 inches in diameter and 350 μm thickness. The insert ignore into journalissuearticles values(E);-5,5-difluoro-1,3,7,9-tetramethyl-10-phenyl-2-insert ignore into journalissuearticles values(2-insert ignore into journalissuearticles values(pyridin-2-yl);vinyl);-5H-54,64-dipyrrolo [1,2-c:2\`,1\`-f] [1,3,2] diazaborinine insert ignore into journalissuearticles values(BODIPY-Pyridine); thin film was coated on n-Si using the spin coating technique. Ohmic and rectifier contacts were coated by evaporation of indium insert ignore into journalissuearticles values(In); and gold insert ignore into journalissuearticles values(Au); using a thermal evaporation system and Au/ BODIPY-Pyridine/n-Si/In Schottky diode was fabricated. Capacitance-voltage insert ignore into journalissuearticles values(C-V); and conductance-voltage insert ignore into journalissuearticles values(G-V); measurements of this structure were gained at different frequencies in the dark. Contingent on the frequency, the series resistance insert ignore into journalissuearticles values(Rs); and the interface state density insert ignore into journalissuearticles values(Nss); values were identified by using the conductance and Hill-Coleman method, respectively.