- Politeknik Dergisi
- Volume:20 Issue:1
- Determination of Contact Parameters of Au/n-Ge Schottky Barrier Diode with Rubrene Interlayer
Determination of Contact Parameters of Au/n-Ge Schottky Barrier Diode with Rubrene Interlayer
Authors : Murat YILDIRIM
Pages : 165-173
View : 38 | Download : 20
Publication Date : 2017-03-01
Article Type : Research Paper
Abstract :Electrical characterization of an Au/n-Ge semiconductor Schottky diode with organic insert ignore into journalissuearticles values(rubrene); interface has been systematically carried out over a wide temperature range. In sample fabrication stage, first, the ohmic In contact has been performed on one surface of n-Ge wafer grown in direction of insert ignore into journalissuearticles values(100);. Later, the other surface of the wafer has been coated with rubrene by spin-coating method and then the Schottky contact has been constituted on the organic material via thermal evaporation method. The current-voltage insert ignore into journalissuearticles values(I-V); characteristics of prepared Schottky diode has been measured at a temperature range of 150-300 K and it has been observed that the diode have a rather good rectification behavior at all temperature. By using the I-V characteristics, the idealite factor, barrier height and some other diode parameters have been calculated for all temperatures. These parameters have also been calculated by means of Cheung-Cheung method. Werner and Güttler’s model has been employed to analyze the temperature dependence of barrier height and ideality factor at low temperatures. The standard deviation of the zero-bias barrier height was calculated as 120 mV and the voltage coefficients of the barrier height were determined asKeywords : Schottky Contacts, Rubrene Thin Film, Gaussian Distribution, Inhomogeneities
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