Method for Low-Temperature Vacuum-Thermal Cleaning of Surface Single Crystals Si and GaAs

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Politeknik Dergisi
Volume:26 Issue:4
Method for Low-Temperature Vacuum-Thermal Cleaning of Surface Single Crystals Si and GaAs

Method for Low-Temperature Vacuum-Thermal Cleaning of Surface Single Crystals Si and GaAs

Authors : Gunel Imanova

Pages : 1441-1444

Doi:10.2339/politeknik.1119884

View : 138 | Download : 485

Publication Date : 2023-12-01

Article Type : Research Paper

Abstract :The paper reports on a method of low-temperature vacuum-thermal cleaning of the surface of Si and GaAs single crystals developed by the authors, which consists in implanting Ba+ ions (or alkaline elements) into Si and GaAs crystals preliminarily cleaned by ultra-high vacuum by ion etching and subsequent annealing in two stage at 800 K - 15 minutes and at 1000 K for 30 minutes. The effect of effective cleaning is achieved due to the fact that the introduced ions of Ba+ and alkaline elements, being active, form compounds with impurity atoms (O, C, S, N, etc.) at the first stage and are removed together with impurities after the second stage of heating.
Keywords : Tek kristal, yüzey, ultra yüksek vakum, temizleme, implantasyon, alma katmanı

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