Two Step Synthesis of CuS Thin Films via High Vacuum Sulphidation

Authors : Ali Yıldırım, Abdullah Ceylan

Pages : 1581-1588

Doi:10.2339/politeknik.1276728

View : 122 | Download : 513

Publication Date : 2024-09-25

Article Type : Research Paper

Abstract :In this study, synthesis of CuS thin films on soda lime glass (SLG) substrates has been investigated. The synthesis method is based on high vacuum post-sulphidation of Cu thin films deposited by rf. magnetron sputtering. Sputtering conditions have been optimized so as to reduce grain size for better diffusion of S atoms through grain boundaries. XRD pattern of the precursor Cu sample revealed fcc structure with an average crystallite size of 24 nm. Best sulphidation was obtained at 175 oC for 60 min. The crystallite size of CuS calculated from the dominant peak of (110) planes was approximately 48 nm while average grain size observed via SEM was about 400 nm. Raman spectroscopy confirmed CuS structure by scattering peaks at around 467-472 cm-1. Elemental mapping unveiled homogenous distribution of Cu and S atoms over the surface. According to EDS data, at% compositions of Cu and S were 51.6% and 48.4%, respectively. Moreover, SIMS investigation has demonstrated uniformity of S atoms through the thickness of CuS thin film. Although XRD, Raman, and EDS analysis have resulted in predominant formation of CuS structure, existence of Cu2S phase with a strong luminescence peak located at 1.8 eV was determined by PL spectroscopy.
Keywords : CuS ince filmler, vakumda sülfürleme, püskürtme, SIMS

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