285 nm AlGaN-BASED DEEP-ULTRAVIOLET LED WITH HIGH INTERNAL QUANTUM EFFICIENCY: COMPUTATIONAL DESIGN

Authors : İrem ALP, Bilgehan Barış ÖNER, Esra EROĞLU

Pages : 51-64

Doi:10.59313/jsr-a.1195106

View : 40 | Download : 6

Publication Date : 2023-03-29

Article Type : Research Paper

Abstract :In this paper, the systematic computational design process of AlGaN-based multiple quantum-well insert ignore into journalissuearticles values(QW); deep-ultraviolet insert ignore into journalissuearticles values(DUV); light-emitting diode insert ignore into journalissuearticles values(LED); grown on sapphire insert ignore into journalissuearticles values(Al2O3); substrate was investigated. An optimization was held to increase internal quantum efficiency insert ignore into journalissuearticles values(IQE); handling the LED parameters such as doping percentage of the n- and the p-type layers of these devices. The structure parameters of the best design were determined through a customized genetic algorithm integrated into the nanostructure quantum electronic simulation insert ignore into journalissuearticles values(nextnano);. As a determining factor, IQE was obtained to be 24% for the devised 285 nm LED. It has been demonstrated that this result can be increased up to a remarkably high value of 70% by a low threading dislocation density insert ignore into journalissuearticles values(TDD); and reduced Auger recombination. In addition, the operation input power and potential difference were successfully kept below 0.1 W/mm2 and 5.05 V, respectively.
Keywords : Deep ultraviolet LED, UV C LED, Quantum efficiency, Genetic algorithm

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