MOS Transistor Based Low Power and High Speed Fundamental Logic Gates

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Erciyes Üniversitesi Fen Bilimleri Enstitüsü Dergisi
Volume:39 Issue:1
MOS Transistor Based Low Power and High Speed Fundamental Logic Gates

MOS Transistor Based Low Power and High Speed Fundamental Logic Gates

Authors : Recep EMİR, Sezai Alper TEKİN

Pages : 126-131

View : 30 | Download : 9

Publication Date : 2023-05-02

Article Type : Research Paper

Abstract :In this paper, low voltage, low power, high speed and full swing, 1V MOS transistor based fundamental logic gates at 1GHz operation frequency are examined. The main purpose of this work is to comprehend basic ideas related to logic gate and circuit designs research field and lay the foundation for novel design methods. The other purpose is to show that these MOS based full swing logic gates could be performed under low voltage and high speed conditions. Furthormore, MOS based non-full swing logic gates are also examined and how to do them full swing. Vaweforms and numerical results of examined structure\`s simulations show that MOS based fundamental logic gates could be acquired at 1V supply voltage and 1GHz operation frequency levels. Theoretical results have been confirmed by HSPICE using 65nm CMOS process technology.
Keywords : Düşük gerilim, Düşük güç, Yüksek hız, Lojik kapı, MOS

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