Photoresponse of the Al/n-Si Schottky diode with nanorod ZnO interface layer prepared by hydrothermal method

Authors : Neslihan TURAN

Pages : 1059-1069

Doi:10.29109/gujsc.1185766

View : 53 | Download : 13

Publication Date : 2022-12-30

Article Type : Research Paper

Abstract :In this study, ZnO nanorods insert ignore into journalissuearticles values(ZnO-NR); were prepared on n-Si wafer by hydrothermal method. Structural and morphologic properties of ZnO nanostructures were investigated through XRD and SEM method. The illumination impacts on the current-voltage insert ignore into journalissuearticles values(I-V); measurements of the prepared Al/ZnO-NR/n-Si diode were explored in the dark and different illumination intensities insert ignore into journalissuearticles values(20–100 mW/cm2); between ± 1.5 V bias voltage range. The Schottky diode barrier height value had an increasing trend with increasing illumination intensity from 20 to 100 mW/cm2 while the ideality factor had a decreasing trend with the increase of photocurrent. The temporary photocurrent increases as illumination intensity increases. The slope insert ignore into journalissuearticles values(α); of the logI_ph-logP curve was obtained as 0.618 and this slope confirmed that this ZnO nanorod shows photoconducting behavior. The short-circuit current insert ignore into journalissuearticles values(I_sc); and open-circuit voltage insert ignore into journalissuearticles values(V_oc); values were obtained to be 774.08 μA and 0.24 V under 100 mW/cm2 illumination intensity, respectively. It was concluded that the prepared Al/ZnO-NR/n-Si diode can be used in the optoelectronic applications, especially for the photodiode industry.
Keywords : Schottky diode, ZnO, Hydrothermal

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