Enhanced Optoelectronic Properties of Zn-Doped SnO2 Thin Films Prepared by Nebulizer Spray Method

Authors : Şerif Rüzgar

Pages : 357-363

Doi:10.18586/msufbd.1762798

View : 38 | Download : 99

Publication Date : 2025-12-24

Article Type : Research Paper

Abstract :In this study, undoped and zinc-doped tin oxide (SnO2) thin films successfully were fabricated by using nebulizer spray technique. The effect of Zn doping on the structural, optical, and electrical properties of SnO2 thin films was investigated. Furthermore, the effect of Zn doping on the photodetector performance of SnO2 was studied. X-ray diffraction (XRD) analysis showed that tetragonal rutile phase was formed without secondary phase in the produced films and indicated that Zn element was effectively incorporated into the SnO2 lattice. Zn doping resulted in a decrease in SnO2 crystallite size and a small increase in lattice constants. The optical band gap of SnO2 was observed to increase from 3.56 eV to 3.62 eV with Zn doping. Current–voltage (I–V) measurements under dark and illuminated conditions demonstrated a substantial enhancement in photocurrent and photoresponsivity for Zn-doped SnO₂, with values increasing from 0.08 A/W to 0.33 A/W. The results showed that Zn doping is a potential candidate to improve the optoelectrical properties of SnO2.
Keywords : İnce film, Zn katkılı SnO2, sisleyici sprey, fotoiletkenlik

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