The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode

Authors : Hasan Hüseyin GÜLLÜ, Dilber Esra YILDIZ

Pages : 919-925

Doi:10.2339/politeknik.389625

View : 40 | Download : 11

Publication Date : 2018-12-01

Article Type : Research Paper

Abstract :SnTe thin film layer was fabricated by magnetron sputtering technique on n-Si substrate, and the electrical properties of the In/SnTe/Si/Ag diode structure was investigated by using temperature dependent forward bias current-voltage insert ignore into journalissuearticles values(I-V); measurements. The main diode parameters were calculated according to the thermionic emission insert ignore into journalissuearticles values(TE); model and they were found in an abnormal behavior with change in temperate in which zero-bias barrier height insert ignore into journalissuearticles values( Φ B 0 ); increases and ideality factor insert ignore into journalissuearticles values( n ); decreases with increasing temperature. Therefore, the total current flow though the junction was expressed by the Gaussian distribution insert ignore into journalissuearticles values(GD); of barrier height. The plot of Φ B 0  vs q 2 kT  showed the existence of inhomogeneous barrier formation and evidence for the application of Gaussian function to identify the distribution of low barrier height patches. The mean barrier height was found as 1.274 with the 0.166 eV standard deviation. From the modified Richardson plot, Richardson constant was calculated as 119.5A/cm 2 K 2 in very close agreement with the reported values. Additionally, the effects of the series resistance insert ignore into journalissuearticles values( R S ); were analyzed by using Cheung’s function. Distribution of the interface states insert ignore into journalissuearticles values( D it ); were extracted from the I-V characteristics and found in increasing behavior with decreasing temperature. 
Keywords : Sputtering technique, barrier height, Gaussian distribution, interface states

ORIGINAL ARTICLE URL