Investigation of Structural, Optical and Electrical Properties of Al0.3Ga0.7N/GaN HEMT Grown by MOCVD

Authors : Ömer AKPINAR, Ahmet Kürşat BİLGİLİ, Mustafa Kemal ÖZTÜRK, Süleyman ÖZÇELİK, Ekmel ÖZBAY

Pages : 687-696

Doi:10.2339/politeknik.583898

View : 42 | Download : 11

Publication Date : 2020-09-01

Article Type : Research Paper

Abstract :In this study, Al 0.3 Ga 0.7 N/GaN high electron mobility transistor insert ignore into journalissuearticles values(HEMT); structure is investigated grown over c- oriented sapphire substrate by using Metal Organic Chemical Vapor Deposition insert ignore into journalissuearticles values(MOCVD); method. Structural , optical, morphological and electrical characteristics of this structure are determined by X-ray diffraction insert ignore into journalissuearticles values(XRD);, Photoluminescence insert ignore into journalissuearticles values(PL);, Ultraviolet insert ignore into journalissuearticles values(UV-Vis.);, Atomic Force Microscopy insert ignore into journalissuearticles values(AFM); and Hall- Resistivity measurements. By using XRD method, 2θ, Full Width at Half Maximun insert ignore into journalissuearticles values(FWHM);, lattice parameters, crystallite size, strain, stress and dislocation values are calculated on symmetric and asymmetric planes. Direct band gap of GaN is determined by PL measurements as 3.24 eV. It is seen that conduction of AlGaN layer starts at 360 nm in UV-Vis. In Hall-Resistivity measurements, it is noticed that carrier density of HEMT structure is not effected by temperature and mobility value is high. Carrier density and mobility values are determined as 5.82x10 15 1/cm 3 and 1198 cm 2 /V.s at room temperature, respectively. At the lowest temperature point insert ignore into journalissuearticles values(25 K); they are calculated as 5.19x10 15 1/cm 3 and 6579 cm 2 /Vs, respectively.
Keywords : HEMT, XRD, Hall, strain, stress

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