Development of AZO TCOs with ALD for HEMT and HJSC Solar Cell Applications

Authors : Deniz TUGRUL, Hüseyin ÇAKMAK, Ekmel ÖZBAY, Bilge İMER

Pages : 209-214

Doi:10.2339/politeknik.873160

View : 28 | Download : 9

Publication Date : 2023-03-27

Article Type : Research Paper

Abstract :Transparent Conductive Oxide insert ignore into journalissuearticles values(TCO); films are widely used in optoelectronic devices, such as solar cells, LEDs, and Lasers. Utilization of these contacts directly affects the device efficiencies. Purpose of this study is to produce and optimize properties of Aluminum doped Zinc Oxide insert ignore into journalissuearticles values(AZO); using a vapor phase technique, Atomic Layer Deposition insert ignore into journalissuearticles values(ALD); for insert ignore into journalissuearticles values(n+); a-Si:H surface of silicon Heterojunction Solar Cells insert ignore into journalissuearticles values(HJSCs); and High Electron Mobility Transistor insert ignore into journalissuearticles values(HEMT); applications. This study is focused on the effect of the deposition temperature and aluminum atomic concentration on structural, electrical and optical properties of ALD grown AZO ohmic contact films. The results show that as-deposited films have 80-90% transmittance in the visible spectra, low resistance insert ignore into journalissuearticles values(2.04x10-3 ohm.cm); and mobility value of 5.25 cm2/V.s.
Keywords : Atomik katman kaplama ALD, alüminyum katkılı çinko oksit AZO, transparan iletken oksitler TCO, alaşımlanmamış o

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