Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al2O3/n-SiC Metal-Insulator-Semiconductor (MIS) Structures

Authors : Gülçin ERSÖZ DEMİR, İbrahim YÜCEDAĞ

Pages : 1040-1052

Doi:10.16984/saufenbilder.744111

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Publication Date : 2020-10-01

Article Type : Research Paper

Abstract :In this study, we investigated the fabrication of Au/n-SiC insert ignore into journalissuearticles values(MS); and Au/Al2O3/n-SiC insert ignore into journalissuearticles values(MIS); type structures with atomic layer deposition insert ignore into journalissuearticles values(ALD); technique and their dielectric properties. The dielectric characteristics of structures were analyzed at frequency range of 1 kHz-500 kHz and by applying a insert ignore into journalissuearticles values(-3V);-insert ignore into journalissuearticles values(9V); bias voltage at 300 K. The significant dielectric parameters such as dielectric constant insert ignore into journalissuearticles values(ε`); and dielectric loss insert ignore into journalissuearticles values(ε`);, real and imaginary parts of electrical modulus insert ignore into journalissuearticles values(M` and M`);, loss tangent insert ignore into journalissuearticles values(tan); were calculated by depending on frequency and voltage from capacitance-voltage insert ignore into journalissuearticles values(C-V); and conductance-voltage insert ignore into journalissuearticles values(G/-V); data. Thereby, the effect of frequency on MS and MIS was searched in detail. The effect of the interface states occurred in the low frequency region can be attributed to the variation of the characteristic behavior of these parameters. It is clear that the dielectric parameters highly depend on the frequency and voltage at depletion and accumulation regions. Moreover, the peak position of M shifts to the left side of the graphic due to the effect of the insulating layer. It can be deduced from the obtained results that the interfacial polarization is easier at low frequencies. Also the interfacial polarization can contribute more to the variation of the dielectric properties.
Keywords : Au Al2O3 n SiC MIS, type structures, AC electrical conductivity, Dielectric Properties, Impedance measurements