IAD Index of Academic Documents
  • Home Page
  • About
    • About Izmir Academy Association
    • About IAD Index
    • IAD Team
    • IAD Logos and Links
    • Policies
    • Contact
  • Submit A Journal
  • Submit A Conference
  • Submit Paper/Book
    • Submit a Preprint
    • Submit a Book
  • Contact
  • Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi
  • Volume:26 Issue:5
  • Some Electrical and Photoelectrical Properties of Conducting Polymer Graphene Composite /n-Silicon H...

Some Electrical and Photoelectrical Properties of Conducting Polymer Graphene Composite /n-Silicon Heterojunction Diode

Authors : Elif DAŞ
Pages : 1000-1009
Doi:10.16984/saufenbilder.1129742
View : 32 | Download : 12
Publication Date : 2022-10-20
Article Type : Research Paper
Abstract :In this study, polythiophene-graphene insert ignore into journalissuearticles values(PTh-G); composite thin film was prepared on the n-type silicon insert ignore into journalissuearticles values(n-Si); semiconductor wafer by the spin coating method. Subsequently, the current-voltage insert ignore into journalissuearticles values(I-V); measurements were made on the fabricated Au/PTh-G/n-Si/Al device to ascertain the impact of the PTh-G interfacial layer on the device performance. The main device parameters such as ideality factor insert ignore into journalissuearticles values(n);, barrier height insert ignore into journalissuearticles values(b);, series resistance insert ignore into journalissuearticles values(Rs); were calculated by using the thermionic emission insert ignore into journalissuearticles values(TE); and Norde functions, and then, the obtained results were discussed in detail. Additionally, the capacitance-voltage insert ignore into journalissuearticles values(C-V); characteristic of the device was examined as a function of the frequency, and the device parameters such as diffusion potential insert ignore into journalissuearticles values(Vd);, Fermi energy level insert ignore into journalissuearticles values(Ef);, carrier concentration insert ignore into journalissuearticles values(Nd);, b were detemined. Finally, the light intensity-dependent I-V measurements were taken to obtain information about the photoelectrical characteristics of the fabricated device. The obtained results have shown that the prepared composite material has a good potential to be used in optoelectronic applications such as photodiode, and photodetector.
Keywords : Graphene, Polythiophene, Composite Material, Photoresponse, Photosensitivity

ORIGINAL ARTICLE URL
VIEW PAPER (PDF)

* There may have been changes in the journal, article,conference, book, preprint etc. informations. Therefore, it would be appropriate to follow the information on the official page of the source. The information here is shared for informational purposes. IAD is not responsible for incorrect or missing information.


Index of Academic Documents
İzmir Academy Association
CopyRight © 2023-2025