Quantum Efficiency Improvement of InGaN Near Ultraviolet LED Design by Genetic Algorithm

Authors : İrem ALP, Bilgehan Barış ÖNER, Esra EROĞLU, Yasemin ÇİFTCİ

Pages : 94-112

Doi:10.16984/saufenbilder.1051252

View : 22 | Download : 8

Publication Date : 2023-02-28

Article Type : Research Paper

Abstract :A near-ultraviolet insert ignore into journalissuearticles values(367-nm); InGaN light-emitting diode insert ignore into journalissuearticles values(LED); with 5.75 nm quantum well depth was designed and both internal/external quantum efficiency insert ignore into journalissuearticles values(IQE/EQE); values were optimized considering the effects of non-radiative recombination rates and possible fabrica-tion errors. Firstly, the IQE of the design was enhanced by a genetic algorithm code which was developed particularly for this study. Distributed Bragg Reflectors and optional ultra-thin 1nm AlN interlayer were also used to increase overall light extraction efficiency. Then, alloy and doping concentration effects on wavelength-dependent optical and structural parameters were analyzed via the CASTEP software package based on density functional theory to pre-sent a more detailed and realistic optimization. The relatively great values of 42.6% IQE and 90.2% LEE were achieved. The final structure with 1.00 mm × 1.00 mm surface area requires only 200 mW input power to operate at 3.75 V.
Keywords : Light emitting diodes LEDs, UV LEDs, near UV devices, solid state devices, GaN based devices