ELECTROLUMINESCENCE STUDY OF InP/InGaAsP/InAs/InP P-I-N LASER HETEROSTRUCTURE

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Sigma Mühendislik ve Fen Bilimleri Dergisi
Volume:34 Issue:2
ELECTROLUMINESCENCE STUDY OF InP/InGaAsP/InAs/InP P-I-N LASER HETEROSTRUCTURE

ELECTROLUMINESCENCE STUDY OF InP/InGaAsP/InAs/InP P-I-N LASER HETEROSTRUCTURE

Authors : Kutsal BOZKURT

Pages : 255-259

View : 35 | Download : 7

Publication Date : 2016-06-01

Article Type : Research Paper

Abstract :MBE insert ignore into journalissuearticles values(Molecular Beam Epitaxy); grown p-i-n laser heterostructure, based on InAs/InP Quantum Dashes with quaternary InGaAsP Quantum Well, were investigated through electroluminescence insert ignore into journalissuearticles values(EL); measurements. Bipolar injection set on just of forward bias,VF, ≅1.3 V, resulting an emission of long wavelength laser light, peaking of 1550 nm. This value was consistent with thermal energy band gap, deduced from current-voltage measurement in space charge limited regime where mobility of injected carriers followed Poole-Frenkel type conduction.
Keywords : EL, quantum dashes, and annihilation

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