Dielectrical parameters and relaxation of Al/NFT/p-Si schottky diode with frequency dependence

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Sigma Mühendislik ve Fen Bilimleri Dergisi
Volume:41 Issue:1
Dielectrical parameters and relaxation of Al/NFT/p-Si schottky diode with frequency dependence

Dielectrical parameters and relaxation of Al/NFT/p-Si schottky diode with frequency dependence

Authors : Emine Karagöz, Songül Fiat Varol, Serkan Sayin, Ziya Merdan

Pages : 84-92

View : 45 | Download : 40

Publication Date : 2023-03-14

Article Type : Other Papers

Abstract :The fabricated Al/ Naphthalimide /p-Si Schottky diode’s dielectrical parameters and series resistance effect have been investigated by using the DC and AC measurements. W e have developed a facile interface structure that consisted of double-layer films in order to investigate the capacitance volume and series resistance effect through the device. The organic interlayer with little nanometer thickness between electrode and inorganic semiconductor drastically reduce the series resistance at the interface. The dielectric parameters have increased with decreasing frequency. Interestingly, the value of ε´ (≈3) even at 1 kHz shows that the prepared naphthalimide (with Thiophene property) nano-interlayer can provide more charges or energy storage ability and so it can be used instead of traditional interfacial layers.
Keywords : Naphthalimide, Dielectrical Properties, Schottky Diode

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