Analysis of the Mosaic Defects in Graded and Non Graded In x Ga 1-x N Solar Cell Structures

Authors : İlknur KARS DURUKAN, Mustafa Kemal ÖZTÜRK, Süleyman ÖZÇELİK, Ekmel ÖZBAY

Pages : 235-240

Doi:10.19113/sdufbed.58096

View : 20 | Download : 15

Publication Date : 2017-02-03

Article Type : Research Paper

Abstract :In this study, graded insert ignore into journalissuearticles values(A); In x Ga 1-x N insert ignore into journalissuearticles values(10.5 ≤ x ≤ 18.4); and non graded insert ignore into journalissuearticles values(B); In x Ga 1-x N insert ignore into journalissuearticles values(13.6 ≤ x ≤ 24.9); samples are grown on c-oriented sapphire substrate using the Metal Organic Chemical Vapour Deposition insert ignore into journalissuearticles values(MOCVD); technique. The structural, optical and electrical features of the grown InGaN/GaN solar cell structures are analyzed using High Resolution X-Ray Diffraction insert ignore into journalissuearticles values(HRXRD);, Photoluminescense insert ignore into journalissuearticles values(PL);, Ultraviolet insert ignore into journalissuearticles values(UV);, current density and potential insert ignore into journalissuearticles values(JV); measurements. According to the HRXRD results; it is determined that the InGaN layer of the graded structure has a lower FWHM insert ignore into journalissuearticles values(Full width at half maximum); value. From the PL measurements, it is observed that the GaN half-width peak value of the graded sample is narrower and the InGaN peak width value of the graded sample is larger. From UV measurements, that the graded sample has a greater band range. JV measurements determine that the performance of the graded structure is higher.
Keywords : InGaN GaN, Solar cell, MOCVD, HRXRD, UV, XRD