Tunneling Conductivity of Disordered Dielectrics

Authors : Hafiz Alisoy, Arif Kivanc Ustun, Lütfi Ulusoy, Meltem Apaydın Üstün, Hakan Çanta

Pages : 103-110

Doi:10.59314/tujes.1762046

View : 63 | Download : 100

Publication Date : 2025-12-31

Article Type : Research Paper

Abstract :Disordered dielectric materials, such as polymers, exhibit charge transport dominated by electron localization due to their structural inhomogeneity. Traditional percolation theory has been widely used to describe conductivity in these systems; however, it often overlooks the quantum mechanical processes at play. This study presents a tunneling conductivity model grounded in quantum principles, linking microscopic electron transfer between localized states to the observed macroscopic electrical behavior. The approach addresses longstanding discrepancies in doped semiconductor systems by accurately capturing the reduction in characteristic tunneling parameters at short inter-center distances, thus aligning theoretical predictions with experimental results. Experimental validation is achieved through oxygen ion implantation in polyethylene (PE) and polyvinylcarbazole (PVC), where the introduction of defects is shown to directly enhance tunneling-driven conductivity. Additional pressure-dependent measurements reveal a logarithmic relationship between resistance and the square root of applied pressure, supporting the model’s description of strain-modulated tunneling pathways. Comparative analysis with amorphous semiconductors and low-molecular-weight dielectrics further demonstrates the model’s broad applicability across various disordered systems. By moving beyond phenomenological descriptions, this work provides a quantum mechanical framework for understanding and predicting conductivity in disordered dielectrics, offering valuable insights for the design of advanced polymer-based insulating materials.
Keywords : Polimerler, Sızma teorisi, Kuantum tünelleme, Elektriksel iletkenlik, Oksijen iyon implantasyonu

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