Investigation Of Dielectric Properties For SnO2-PVA/n-Si Schottky Barrier Diode

The dielectric properties of SnO2-PVA nanocomposite films were examined graphically using capacitance (C) and conductivity (G/w) data obtained over a wide frequency and voltage range at room temperature. For SnO2-PVA/n-Si, some dielectric parameters (dielectric constants (ε\', ε\'\') and electrical modulus (real M\' and imaginary M\'\' parts), loss tangent (tan δ) and ac electrical conductivity (σac) frequency and voltage dependence were calculated. As the frequency increased for each applied bias voltage, the ε\', ε\'\' and tan δ values decreased, and it was observed that the changes in these parameters were more effective at low frequencies due to the additional loads on the interface states. While M\' increases as the frequency increases due to the short-range mobility of charge carriers and has low values in the low-frequency region. The value of M\'\' decreases as the frequency increases due to the decrease in polarization and the density of interface states (Nss) effects. While the value of electrical conductivity is almost constant at low frequencies, it increases almost exponentially at high frequencies.