IAD Index of Academic Documents
  • Home Page
  • About
    • About Izmir Academy Association
    • About IAD Index
    • IAD Team
    • IAD Logos and Links
    • Policies
    • Contact
  • Submit A Journal
  • Submit A Conference
  • Submit Paper/Book
    • Submit a Preprint
    • Submit a Book
  • Contact
  • Türkiye Teknoloji ve Uygulamalı Bilimler Dergisi
  • Volume:1 Issue:1
  • Electronic and Elastic Properties of CsCaF3 Doped with Vanadium

Electronic and Elastic Properties of CsCaF3 Doped with Vanadium

Authors : Naciye ECE, Murat AYCİBİN
Pages : 1-7
View : 24 | Download : 8
Publication Date : 2017-04-30
Article Type : Research Paper
Abstract :In this paper, we applied Density Functional Theory to see effect of doped vanadium insert ignore into journalissuearticles values(V); element on physical properties of CsCaF3 compound by Wien2k software. Perdew-Burke-Ernzerhof General Gradient approximation was used for exchange-correlation energy. We observed that when CsCaF3 compound doped with Vanadium, value of energy band gap gets smaller around 1eV as expected. In addition, we calculated and interpreted how the density of states was formed by atoms. Moreover, the compound has indirect band transition and it is classified as a semiconductor. Furthermore, calculated elastic constant verify mechanic stability conditions for cubic structure. Moreover, anisotropy factor is bigger than unity means material is anisotropic.
Keywords : Density functional theory, Electronic band structure, Optical properties, Elastic properties, Wien2k

ORIGINAL ARTICLE URL
VIEW PAPER (PDF)

* There may have been changes in the journal, article,conference, book, preprint etc. informations. Therefore, it would be appropriate to follow the information on the official page of the source. The information here is shared for informational purposes. IAD is not responsible for incorrect or missing information.


Index of Academic Documents
İzmir Academy Association
CopyRight © 2023-2025