FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS

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Eskişehir Technical University Journal of Science and Technology A - Applied Sciences Engineering
Volume:20 Special Issue
FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS

FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS

Authors : Gonca ILGU BUYUK, Saliha ILICAN

Pages : 92-98

Doi:10.18038/estubtda.642315

View : 19 | Download : 11

Publication Date : 2019-12-16

Article Type : Research Paper

Abstract :In this work, Er doped ZnO films and silicon substrates were used as n-type and p-type semiconductors, respectively. In order to obtained p-Si/n-ZnO:Er heterojunction structures, top insert ignore into journalissuearticles values(aluminum; Al); and bottom insert ignore into journalissuearticles values(gold; Au); metal contacts were deposited using a evaporator and sputter, respectively. The electrical characterization of these heterojunctions were investigated by current–voltage insert ignore into journalissuearticles values( I–V ); characteristics at room temperature and in dark. It was observed that Au/p-Si/n-ZnO:Er/Al heterojunction structures have rectifying properties. The diode parameters such as barrier height, series resistance and ideality factor were investigated by using I–V measurement data. These parameters were determined by using different methods.
Keywords : ZnO, Heterojunctions, Diode parameters

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