Electrical conduction mechanisms in plasma-enhanced chemical vapor deposited SiO2 dielectric films

Authors : Halit ALTUNTAŞ

Pages : 281-287

View : 16 | Download : 10

Publication Date : 2017-09-20

Article Type : Research Paper

Abstract :In this study, SiO 2 films with thicknesses 50 nm were grown on n -GaAs substrate by plasma enhanced chemical vapor deposition technique. To investigate the electrical transport mechanisms, Au/SiO 2 / n -GaAs insert ignore into journalissuearticles values(MOS); type capacitor structures were fabricated and measured current density-voltage insert ignore into journalissuearticles values( J-V ); characteristics at room temperature. As a function of the applied gate voltage, Schottky emission, Frenkel-Poole emission, and trap-assisted tunneling were found as dominant current transport mechanisms under depletion mode. The obtained trap levels were attributed to defects related with the Ga vacancies formed at the SiO 2 /GaAs interface.
Keywords : PECVD, SiO2, Frenkel Poole emission, Dielectric