Interface Effects of Annealing Temperatures in Al/HfO2/p-Si (MIS) Structures

Authors : Şadan ÖZDEN, Osman PAKMA

Pages : 273-280

View : 26 | Download : 8

Publication Date : 2017-09-20

Article Type : Research Paper

Abstract :In this study, Al/HfO 2 /p-Si insert ignore into journalissuearticles values(MIS); structures were prepared by using the sol-gel method for three different annealing temperatures.  The current-voltage insert ignore into journalissuearticles values(I-V); and capacitance-voltage insert ignore into journalissuearticles values(C-V); characteristics of these structures were investigated by taking into consideration the effect of the interfacial insulator layer and surface states insert ignore into journalissuearticles values(N ss ); at room temperature. All of the structures showed non-ideal I-V behaviour with ideality factor insert ignore into journalissuearticles values(n); in the range between 2.35 and 4.42 owing to interfacial insulator layer and surface states. The values of N ss and barrier height insert ignore into journalissuearticles values( f b ); for three samples were calculated. The values of n and N ss ascend with increasing the insulator layer thickness insert ignore into journalissuearticles values(δ); while the values of f b decreases. 
Keywords : High dielectric materials, sol gel, MIS devices