The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN

Authors : İzel PERKİTEL, İsmail ALTUNTAS, İlkay DEMİR

Pages : 281-291

Doi:10.35378/gujs.822954

View : 21 | Download : 7

Publication Date : 2022-03-01

Article Type : Research Paper

Abstract :In this work, the effect of Si insert ignore into journalissuearticles values(111); substrate surface cleaning by RCA insert ignore into journalissuearticles values(Radio Corporation of America); method on growth rate and crystalline quality of epitaxially grown AlN thin films by MOVPE insert ignore into journalissuearticles values(Metal Organic Vapor Phase Epitaxy); technique is investigated. In situ reflectance system and high resolution X-ray diffraction insert ignore into journalissuearticles values(HRXRD); technique are used for the analysis of growth rate and crystal quality of epitaxial AlN layers, respectively. Also, The Raman measurement is done to show the effect of the RCA cleaning procedure on the position of the peaks that occurred in the Raman spectra. The results have shown that the surface cleaning of Si insert ignore into journalissuearticles values(111); substrate by the RCA method removes the oxide layer formed on the surface, also helps to decrease the parasitic reactions and increases the adatom efficiency, results in an increased growth rate of the AlN layer. Besides, surface cleaning of Si insert ignore into journalissuearticles values(111); substrate by the RCA method has reduced the FWHM value ~5% for ω-2θ scan and ~60% for ω scan of AlN epilayer, indicating an improvement in crystal quality.
Keywords : RCA, Epitaxial AlN, MOVPE, X ray diffraction, In situ reflectance