ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING

Authors : Mehmet KASAP, Selim ACAR, Bora ALKAN

Pages : 31-35

View : 15 | Download : 8

Publication Date : 2010-08-11

Article Type : Other Papers

Abstract :Normal 0 21 false false false TR X-NONE X-NONE MicrosoftInternetExplorer4 To explain the behavior of Hall mobility versus temperature T behavior in In0.51Ga0.49As and In0.60Ga0.40As detailed calculations have been carried out based on Kubo formula by taking the dislocation scattering as the dominant scattering mechanism. A good agreement has been obtained between the theory and the experiment.   Key Words: Hall mobility, dislocation scattering, Kubo formula  
Keywords : Hall mobility, dislocation scattering, Kubo formula