Analysis of Hopping Conduction and Space Charge Limited Currents in Nearly Ideal Metal/Semiconductor Contacts

Authors : Haluk KORALAY, Nihat TUĞLUOĞLU, Kübra AKGÜL, Şükrü ÇAVDAR

Pages : 901-907

View : 18 | Download : 8

Publication Date : 2014-03-20

Article Type : Research Paper

Abstract :We have formed a nearly ideal Au/n-Si Schottky contact and deposited gold insert ignore into journalissuearticles values(Au); metal on n-Si insert ignore into journalissuearticles values(100); using thermally evaporation method for an explanation of space charge limited current insert ignore into journalissuearticles values(SCLC); from current-voltage insert ignore into journalissuearticles values(I-V); characteristic, interface trap density from capacitance-conductance-voltage insert ignore into journalissuearticles values(C-G-V); characteristics and hopping conduction from conductance-frequency insert ignore into journalissuearticles values(G-f); characteristic in nearly ideal metal/semiconductor contacts. The device showed good intimate rectifying behavior. To observe the SCLC mechanism and determine interface trap density of the sample, the log insert ignore into journalissuearticles values(I);−log insert ignore into journalissuearticles values(V); and C-G-V characteristics are plotted. The interface trap density values for low frequency insert ignore into journalissuearticles values(5 kHz); and high frequency insert ignore into journalissuearticles values(1 MHz); are determined as 4.98 x 1014 eV-1 cm-3 and 7.81 x 1012 eV-1 cm3, respectively. At the same time the main diode parameters such as ideality factor and barrier height are determined as 1.048 and 0.807 eV, respectively. These diode parameters refer a nearly ideal metal-semiconductor contact.
Keywords : Intimate contact, I V, Space charge limited current, Pool Frenkel effect, ideality factor, Schottky barrier height