THE EFFECT OF GROWTH CONDITIONS ON THE OPTICAL AND STRUCTURAL PROPERTIES OF InGaN/GaN MQW LED STRUCTURES GROWN BY MOCVD

Authors : Saime CETİN, Semran SAĞLAM, Süleyman ÖZÇELİK, Ekmel ÖZBAY

Pages : 1105-1110

View : 57 | Download : 9

Publication Date : 2014-08-27

Article Type : Conference Paper

Abstract :Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane insert ignore into journalissuearticles values(0001);-faced sapphire substrate. The effect of growth conditions, such as the well growth time, growth temperatures, and indium flow rate on the properties of MQW structures were investigated by using high resolution X-ray diffraction and room temperature photoluminescence. By increasing growth temperature, the emission wavelengths showed a blue-shift while it red-shifted via an increase in the indium flow rate. The emission wavelength can be tuned by way of changing the well growth time of the samples.
Keywords : Metalorganic chemical vapor deposition, InGaN, Light emitting diode, Multi quantum well, High resolution X ray diffraction, Photoluminescence

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