Effect of substrate temperature on structural, morphological, and optical properties of Gallium Oxide thin films deposited by RF-Sputtering

Authors : Fevkani Yıldız, Hülya Akçay, Aykut Astam, Mutlu Kundakçı

Pages : 1498-1507

Doi:10.35378/gujs.1275066

View : 108 | Download : 188

Publication Date : 2024-09-01

Article Type : Research Paper

Abstract :In this paper, gallium oxide (Ga2O3) thin films at various substrate temperatures (Ts) were grown on Indium Tin Oxide (ITO), glass, p-type silicon by radio-frequency magnetron sputtering (RFMS). We investigated how structural, morphological and optical properties change with various Ts. XRD results of thin films grown on p-type silicon substrate suggest that crystallinity properties of synthesized thin films strongly depend on the Ts. From SEM and AFM analyses of Ga2O3 thin films grown on p-type silicon substrate, it was observed that when the temperature increased, a porous structure appeared, and the grain size changed depending on the Ts. Moreover, obtained results from the absorption measurements, the bandgap energy of Ga2O3 thin films grown on the p-type silicon substrate decreased with increasing substrate temperature.
Keywords : Gallium oxide, Thin film, Sputter, Nano structure