Effectuality of the Frequency Levels on the C&G/ω–V Data of the Polymer Interlayered Metal-Semiconductor Structure

Authors : Jaafar Abdulkareem Mustafa ALSMAEL, Nuray URGUN, Serhat Orkun TAN, Habibe TECİMER

Pages : 554-561

Doi:10.54287/gujsa.1206332

View : 43 | Download : 6

Publication Date : 2022-12-31

Article Type : Research Paper

Abstract :Voltage and frequency dependent of capacitance and conductivity versus voltage insert ignore into journalissuearticles values(C&G/ω–V); qualifications of Al/insert ignore into journalissuearticles values(ZnFe2O4-PVA);/p-Si structure was compared and examined at lower and higher frequencies as 10 kHz and 1 MHz, respectively. The negative capacitance insert ignore into journalissuearticles values(NC); is a phenomenon that occurs at low frequencies and is primarily caused by minority carrier injection, series resistance insert ignore into journalissuearticles values(Rs);, and surface states insert ignore into journalissuearticles values(Nss);. Because of the specific density distribution and relaxation times of Nss, NC acts different behavior at lower and higher frequency levels and loses its effectiveness with increasing frequency. Also, the fluctuations in C and G/ω were ascribed to doping concentration, surface states loss charges, and interlayer thickness. Nss was acquired using the low-high frequency capacitance method insert ignore into journalissuearticles values(CLF-CHF);, and the forward biased C−2 vs V graphs insert ignore into journalissuearticles values(at 10 kHz to 1 MHz); were used to determine the Fermi level insert ignore into journalissuearticles values(EF);, barrier height insert ignore into journalissuearticles values(ΦB);, and concentration of doped acceptor atoms insert ignore into journalissuearticles values(NA);. Accordingly, it has been detected that C and G/ω are highly dependence on biases and frequencies. Then again, the polarizations and surface states effect are barely perceptible at extremely higher frequency levels. Thus, polarization and Rs stand out as important parameters that should be taken into account when examining the basic parameters of electronic devices.
Keywords : Metal Polymer Semiconductor Structures, Surface States, Negative Capacitance, Series Resistance, Frequency

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