Illumination Response of Impedance Properties of Al/Gr-PVA/p-Si (MPS) Device

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Gazi University Journal of Science Part A: Engineering and Innovation
Volume:10 Issue:1
Illumination Response of Impedance Properties of Al/Gr-PVA/p-Si (MPS) Device

Illumination Response of Impedance Properties of Al/Gr-PVA/p-Si (MPS) Device

Authors : Dilan ATA, Muzaffer BALBAŞI, Adem TATAROGLU

Pages : 89-96

Doi:10.54287/gujsa.1207057

View : 78 | Download : 12

Publication Date : 2023-03-28

Article Type : Research Paper

Abstract :Admittance measurements including capacitance insert ignore into journalissuearticles values(C); and conductance insert ignore into journalissuearticles values(G); of Al/Gr-PVA/p-Si insert ignore into journalissuearticles values(MPS); device were made at 500 kHz and under dark and 200 mW/cm2 conditions. The illumination response on the electric characteristics of the device was investigated using the C-2-V characteristics. It was observed that the electronic parameters of the device changed depending on the illumination conditions. The doping concentration, Fermi energy and barrier height were obtained using the C-2-V data. The surface state insert ignore into journalissuearticles values(Nss); was also obtained using capacitance data. The results show that the device can be used as a photocapacitor.
Keywords : Gr doped PVA, Illumination, Admittance, Basic electrical parameters

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