A Comparison Electronic Specifications of the MS & MPS type Schottky Diodes (SDs) via Utilizing Voltage-Current (V-I) Characteristics

Authors : Çiğdem Ş GÜÇLÜ
Pages : 62-69
Doi:10.54287/gujsa.1212696
View : 40 | Download : 8
Publication Date : 2023-03-28
Article Type : Research Paper
Abstract :The effects of the application of the insert ignore into journalissuearticles values(TeO2:Cu-PVP); interface to the Al/p-Si insert ignore into journalissuearticles values(MS); type SD on the performance of the new Al/insert ignore into journalissuearticles values(TeO2:Cu doped PVP);/p-Si insert ignore into journalissuearticles values(MPS); SD were reviewed using forward and reverse bias V-I measurements. The thermionic emission insert ignore into journalissuearticles values(TE); and Cheung & Cheung functions were employed to ascertain the influences of an additional organic interfacial layer on the comparative outcomes of this research. Thus, some essential electrical attributes such as saturation current insert ignore into journalissuearticles values(Is);, ideality factor insert ignore into journalissuearticles values(n);, rectification-ratio insert ignore into journalissuearticles values(R.R.=Iforward/Ireverse);, barrier height B.H. insert ignore into journalissuearticles values(Φbo);, and series/shunt resistances insert ignore into journalissuearticles values(Rs/Rsh); were computed. Furthermore, the density of surface states insert ignore into journalissuearticles values(Nss); was acquired from the V-I plots according to the Card & Rhoderick method. The observed experimental results indicated that the insert ignore into journalissuearticles values(TeO2:Cu-PVP); inter-layer enhanced the quality of MS type SD as respects obtained low reverse current, Nss, Rs, and high Rsh and R.R. values. All these results indicate that insert ignore into journalissuearticles values(TeO2:Cu-PVP); inter-layer can be used successfully instead of conventional insulators for its favored specifications like easy fabrication processes, low cost, and flexibility features.
Keywords : TeO2 Cu doped PVP, interlayer, On performance MS, MPS type SDs, Difference between calculation methods, Density of surface states

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