Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†

Authors : Merve ACAR, Soheil MOBTAKERİ, Mehmet ERTUĞRUL, Emre GÜR

Pages : 1-5

Doi:10.17350/HJSE19030000206

View : 21 | Download : 11

Publication Date : 2021-03-31

Article Type : Research Paper

Abstract :Transition metal dichalcogenide insert ignore into journalissuearticles values(TDMCs); placed on a 3D semiconductor substrate haveleads to significant advances in the electronic industry with new opportunities based on 2D/3D heterojunction based diverse devices without any restrictions, such as lattice compatibility. In this study, magnetron sputtering technique was used to grow layered tungsten disulfide insert ignore into journalissuearticles values(WS2); thin films onto p-Si and thus WS2/p-Si heterojunctions were created. The structural and chemical parameters of this sputtered WS2 films were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy insert ignore into journalissuearticles values(XPS); and atomic force microscopy insert ignore into journalissuearticles values(AFM);. Electrical characterization of WS2/p-Si heterojunction was also obtained to investigate Log insert ignore into journalissuearticles values(I);-V and linear I-V characteristics. A typical diode like I-V behavior was observed with a five-ordered rectifying ratio. It was observed that the heterojunction has a barrier height of 0.48 eV, the leakage current at -0.2 V is 2.25×10-6 A and the ideality factor is 5.7. This work show that single step magnetron sputtering WS2/p-Si heterojunction has great importance for heterojunction based future nanoelectronic devices.
Keywords : 2D materials, TMDC, WS2, 2D 3D heterojunctions