Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer

Authors : Abdulkerim KARABULUT, İkram ORAK, Abdülmecit TÜRÜT

Pages : 116-122

Doi:10.32571/ijct.456902

View : 39 | Download : 10

Publication Date : 2018-12-28

Article Type : Research Paper

Abstract :We have fabricated, metal-insulator-semiconductor insert ignore into journalissuearticles values(MIS); structures, the Au/Ti/HfO 2 / n -GaAs. Metal rectifying contacts were made by dc magnetron sputtering technique, and h afnium dioxide insert ignore into journalissuearticles values( HfO 2 ); interfacial insulating layer with 3, 5 and 10 nm thickness has been formed by the atomic layer depositon insert ignore into journalissuearticles values(ALD); technique. The series resistance value from the forward bias current-voltage insert ignore into journalissuearticles values( I-V ); curves of 3 nm and 5 nm MIS structures very slightly has reduced with a decrease in the measurement temperature. The barrier height value from I-V characteristics increased with increasing HfO 2 layer thickness. The barrier increment in the rectifying contacts is very important for an adequate barrier height in FET operation and is useful for the gates of the metal-semiconductor field-effect transis tors or also show promise as small signal zero-bias rectifiers and microwave mixers.
Keywords : Metal Oxide semiconductor structures, GaAs semiconductor, Hafnia HfO2, Atomic layer deposition ALD, technique

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