Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors

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Journal of Nuclear Sciences
Volume:2 Issue:2
Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors

Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors

Authors : Ş KAYA, E YILMAZ, A ÇETİNKAYA

Pages : 48-52

Doi:10.1501/nuclear_0000000012

View : 50 | Download : 12

Publication Date : 2015-06-20

Article Type : Research Paper

Abstract :The effects of gamma-ray exposures on the electrical characteristics of Silicon Nitride insert ignore into journalissuearticles values(Si3N4); metal–insulator–semiconductor insert ignore into journalissuearticles values(MIS); structures have been investigated at room temperature. The MIS structures were irradiated with the GAMMACELL 220 Co-60 radioactive source. The distributions of interface states and series resistance were determined from the C–V and G/ω-V characteristics by taking into account the irradiation-dependent the barrier height. Both the values of series resistance, interface states and barrier heights enhanced with increasing dose. Experimental results demonstrate that gamma-ray irradiations have the significant effects on electrical characteristics of Si3N4 MIS structures.
Keywords : Radiation effects, Si3N4 MIS capacitor, Interface states, Series resistance

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