InP based converter cells under DC plasma influence

Home Page
About
Submit A Journal
Submit A Conference
Submit Paper/Book
- Submit a Preprint
- Submit a Book
Contact

Journal of Energy Systems
Volume:3 Issue:4
InP based converter cells under DC plasma influence

InP based converter cells under DC plasma influence

Pages : 183-188

View : 11 | Download : 7

Publication Date : 2019-12-31

Article Type : Research Paper

Abstract :The plasma parameters have been determined in an infrared image converter for the InP based plasma cell in a broad range of gas pressure from 10 Torr to 760 Torr at room temperature. The electrical properties of the system are controlled by both the plasma and InP electrode. InP has high electron mobility compared to other semiconductors and it can be used for high-speed optoelectronic device applications. Further, any small change in the charge transport mechanism may cause important changes in the system characteristics. The experimental measurements are carried out in air and He media. The homogeneity of the discharge radiation emission depends on the resistivity distribution of the photodetector plate and the radiation intensity is proportional to the plasma current. Local changes in the resistivity of the semiconductor result in local changes in the current and plasma emission.
Keywords : Breakdown, DC plasma, InP electrode, Mean electron energy

ORIGINAL ARTICLE URL

VIEW PAPER (PDF)

* There may have been changes in the journal, article,conference, book, preprint etc. informations. Therefore, it would be appropriate to follow the information on the official page of the source. The information here is shared for informational purposes. IAD is not responsible for incorrect or missing information.