OPTICAL, ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF QUERCETIN-CO(II) COMPLEX/N-SI ORGANIC-INORGANIC HYBRID DEVICE

Authors : Cihat ÖZAYDIN, Ahmet TOMBAK, Mehmet BOĞA, Tahsin KILIÇOĞLU

Pages : 15-27

Doi:10.23884/mejs.2015.1.2.01

View : 42 | Download : 8

Publication Date : 2015-12-25

Article Type : Research Paper

Abstract :Quercetin is a member of the flavonoid’s class and colorful organic molecule widely distributed in nature. Quercetin is known as 2-insert ignore into journalissuearticles values(3,4-dihydroxyphenyl);-3,5,7-trihydroxy-4H-chromen-4-one with molecular formula C15H10O7. Also, quercetin has conjugated structure with 16 π-rich electrons. In this study, Quercetin cobalt insert ignore into journalissuearticles values(II); complex insert ignore into journalissuearticles values(Quercetin-Coinsert ignore into journalissuearticles values(II); Complex); was synthesized. The thin films of synthesized quercetin cobalt insert ignore into journalissuearticles values(II); complex were formed on glass and semiconductor substrates by sol-gel spin coating technique. The absorption, reflection and transmittance spectra of the thin film were taken in 200-1100 nm wavelength range. The optical band gap of the film was determined from absorption studies and was found to be 2.59 eV for direct transitions and 1.90 eV for indirect transitions. The morphological properties of the thin film formed on the semiconductor substrates was analyzed by scanning electron microscopy insert ignore into journalissuearticles values(SEM); and atomic force microscopy insert ignore into journalissuearticles values(AFM);. We fabricated Au/Quercetin-Coinsert ignore into journalissuearticles values(II); Complex/n-Si organic-inorganic hybrid device to investigate electrical and photoelectrical properties. The current-voltage insert ignore into journalissuearticles values(I-V); measurement of the device was carried out at room temperature and in dark. The device has a rectification behavior with the ideality factor n of 1.55 and the barrier height ϕb of 0.77 eV. In addition, the short circuit current insert ignore into journalissuearticles values(Isc); and open circuit voltage insert ignore into journalissuearticles values(Voc); have been extracted from the I-V measurements under 100 mW/cm2 illumination conditions. Besides, the capacitance-voltage insert ignore into journalissuearticles values(C-V); characteristics of the device at different frequency and room temperature are discussed.
Keywords : Quercetin co II, complex Thin film, Optical properties, Photoelectrical properties

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