Aerosol-assisted chemical vapor deposition of copper sulfide nanostructured thin film from newly synthesized single-source precursor

Authors : Sohail SAEED, Naghmana RASHID, Khuram Shahzad AHMAD

Pages : 796-804

Doi:10.3906/kim-1210-56

View : 18 | Download : 6

Publication Date : 0000-00-00

Article Type : Research Paper

Abstract :The copperinsert ignore into journalissuearticles values(II); complex of N-[ethylinsert ignore into journalissuearticles values(butyl);carbamothioyl]- 3,5-dinitrobenzamide insert ignore into journalissuearticles values(1); has been synthesized and characterized by elemental analysis, IR spectroscopy, and atmospheric pressure chemical ionization-mass spectrometry. Thermogravimetric analysis shows that complex 2 decomposes in 2 steps to form copper sulfide. The complex was used as a single-source precursor for the deposition of copper sulfide thin film by aerosol-assisted chemical vapor deposition at 350 °C. The powder X-ray diffraction pattern of thin film of the complex showed the deposition of monoclinic roxbyite Cu7S4 and orthorhombic anilite Cu7S4 phases at 350 °C with spherical crystallites. The degree of film surface roughness was determined by atomic force microscopy. The scanning electron microscopy and energy dispersive X-ray analysis results showed the uniform distribution of copper sulfide in the film, which makes it a useful semiconducting material on a structured surface.
Keywords : Copper complex, thin film, aerosol assisted chemical vapor deposition, scanning electron microscopy, powder X ray diffraction